| PART |
Description |
Maker |
| KM681000ELT-7L KM681000ELG-5 KM681000ELG-7 KM68100 |
128Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KM684000ALG-5 KM684000ALGI-7L KM684000ALP-7 K6T100 |
128Kx8 bit Low Power CMOS Static RAM
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:AC; No. of Contacts:3; Connector Shell Size:14S; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight; Circular Contact Gender:Pin
128Kx8 bit Low Power CMOS Static RAM 128Kx8位低功耗CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K6X1008C2D-TQ55 K6X1008C2D-BF55 K6X1008C2D-GF55 K6 |
128Kx8 bit Low Power CMOS Static RAM 128Kx8位低功耗CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| N01M0818L1 N01M0818L1AN N01L0818L1AD-85I N01L0818L |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| 930104704 930104701 930104702 930104703 5962-89598 |
Rad. Tolerant 128Kx8, 5-Volt Very Low Power CMOS SRAM
|
ATMEL Corporation
|
| 28C17A-25/P 28C17A-25/L 28C17A-25I/L 28C17A-25I/P |
5V, Low-Power, Parallel-Input, Voltage-Output, 12-Bit DAC
128Kx8 EEPROM
12-Bit DACs with 32-Channel Sample-and-Hold Outputs
Evaluation Kit/Evaluation System for the MAX5417_, MAX5418_, MAX5419_
Calibrated, Quad, 12-Bit Voltage-Output DACs with Serial Interface
5V, Low-Power, Voltage-Output, Serial 12-Bit DACs
10-Bit Voltage-Output DACs in 8-Pin µMAX
Single-Supply 3V/5V, Voltage-Output, Dual, Precision 10-Bit DACs x8的EEPROM
|
Microchip Technology, Inc.
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| 28C64AX-20/K 28C64AX-25/K 28C64AX-15I/K 28C64AX-15 |
Evaluation Kit for the MAX5883, MAX5884, MAX5885
Quad, 12-Bit, Low-Power, 2-Wire, Serial Voltage-Output DAC
128Kx8 EEPROM
16-Bit DACs with 16-Channel Sample-and-Hold Outputs
Buffered, Fast-Settling, Quad, 12-/10-/8-Bit, Voltage-Output DACs
12-Bit, 250Msps, High-Dynamic-Performance, Dual DAC with LVDS Inputs
12-Bit, Low-Power, Quad, Voltage-Output DAC with Serial Interface
3.3V Transceiver with Two EIA TIA 562 Receivers Active in Shutdown x8的EEPROM
|
Microchip Technology, Inc.
|
| K6R1008V1C K6R1008V1C-C K6R1008V1C-C10 K6R1008V1C- |
128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
|
Samsung semiconductor
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
